DESIGN OF 20 nm FinFET STRUCTURE WITH ROUND FIN CORNERS USING SIDE SURFACE SLOPE VARIATION
نویسندگان
چکیده
FinFET transistors have emerged as novel devices having superior controls over short channel effects (SCE) than the conventional MOS transistor devices. However, FinFET exhibit certain undesirable characteristics such as corner effects, quantum effects, tunneling etc. Usually, the corner effect deteriorates the performance by increasing the leakage current. In this work, the corner effect of Tri-gate bulk FinFETs are investigated by 3D Process and device simulation and their electrical characteristics are compared for different bias conditions. Finally the optimum design of bulk FinFETs are achieved with 3-D device simulation under changing slope of Fin.
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